Browsing by Advisor "Shrivastava, Mayank"
Now showing items 1-10 of 10
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Addressing the Performance and Reliability Bottlenecks in 2D Transition Metal Dichalcogenide (TMD) Based Transistor Technology
In this thesis, we presented different contributions towards the development of 2D material technology. Firstly the realization of desired dimensions over singlecrystal high-quality MoS2 material through dry etching ... -
Atomic-level Investigation and Proposals to Address Technological Roadblocks and Reliability Challenges in 2D Material Based Nanoelectronic Devices
The transistor scaling is witness to many extraordinary inventions during its consecutive miniaturization. The journey began from Dennard’s classical constant field scaling, crossing through the milestones like strain ... -
Device-Circuit Reliability Co-Design in High voltage and Power devices
For the last four decades, silicon CMOS technology has captured a significant share in IC, smart power IC, SoC, and the power device market. But there is aggressive research on other materials such as graphene & similar ... -
Disruptive Approaches to Address Performance & Reliability Challenges in 2-Dimentional (2D) Material Based Transistors & Memories
In 2020, Apple introduced its most advanced laptop that has the A14 Bionic processor. The very first processor, Intel’s 4004, was launched in 1971 and had a transistor (the basic building block of a processor) density of ... -
Electro-thermal Transport through Graphene & CNT at Nano-second Time Scales and its Implications on Device Reliability
The prospects of using Graphene and MWCNT as a channel material for RF transistors and interconnects, respectively, have recently garnered much attention. E orts are being made for improvements at the material and device ... -
ESD Reliability Physics and Reliability Aware Design of Advanced High Voltage CMOS & Beyond CMOS Devices
Electrostatic Discharge (ESD) reliability is one of the major reliability concerns in integrated circuits (IC), which if not addressed while designing devices and circuits, can lead to a permanent damage to the Integrated ... -
Physics Based Design & Development of Gallium Nitride High Electron Mobility Transistors (HEMTs) & Schottky Barrier Diodes for Power and RF Applications
Silicon-based transistors such as MOSFETs have been the preferred choice for decades now for both power as well as high-frequency device applications. The meteoric rise of Silicon was fuelled by the quest for a highly ... -
Physics-based Approach For Efficient & Reliable Enhancement-mode AlGaN/GaN High Electron Mobility Transistor (HEMT) Technology
Power semiconductor devices have been the key to growth of power electronics market, and cover application areas ranging from mobile stations (commercial) to missile seekers (military). Continuously increasing demand for ... -
Reliability Physics of Thin-Film Transistors
Thin-film transistor technology based on non-crystalline materials forms the workhorse of large area electronics applications including display systems, sensor systems and novel technologies including flexible electronics. ... -
Safe Operating Area Reliability of AlGaN/GaN High Electron Mobility Transistors (HEMTs)
Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) are extensively considered for power switching and RF applications by the virtue of their unique properties. However, despite of its attractive ...