Browsing Centre for Nano Science and Engineering (CeNSE) by Title
Now showing items 61-80 of 154
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Fabrication and Characterization of Nanostructured Antibacterial Surfaces
Bacterial antibiotic resistance is becoming wide spread due to the excessive and unregulated use of antibiotics in healthcare and agriculture. At the same time the development of new antibiotics has become slow. Adding ... -
Fabrication of suspended Graphene microchannels and its application in studying graphene-liquid interface
Graphene is a single layer of sp2 hybridized carbon atoms having extraordinary mechanical, optical, and electrical properties. These exotic properties make them attractive for applications in all fields of science and ... -
Finite Element Method based Model Order Reduction for Electromagnetics
Model order reduction (MOR) refers to the process of reducing the size of large scale discrete systems with the goal of capturing their behavior in a small and tractable model known as the reduced order model (ROM). ROMs ... -
From Impact to Encapsulation: Advancing Droplet Technologies with Liquid Marbles
Droplets, in their myriad forms and functions, have become indispensable players in the world of microreactors, drug delivery systems, crystallization studies, and cell culture platforms. These tiny, self-contained units ... -
From Independent Control to Self Propulsion of Helical Nanoswimmers : Towards All Magnetic Active Matter
There has been a surge of interest in recent years to design and fabricate various types of motile micro/nanoparticles that can be maneuvered using chemical, optical, thermal, electrical or magnetic energy sources. A ... -
Gallium Oxide based High Voltage Diode : Design, Fabrication, Characterization and Modelling
High-efficiency power electronic devices intend to play a significant role in curbing global warming and enhancing energy conservation. Owing to its superior material properties, Gallium oxide (Ga2O3) has emerged as a new ... -
Gallium Oxide Vertical Power Devices - Modeling, Material Growth, and Hetero-epitaxial Integration with Silicon
𝛽-Ga2O3 is a candidate for a new generation of power semiconductors that can significantly lower the conduction losses and increase power density in the power converters. PFOM or power figure of merit (V2Br/Ron) is a ratio ... -
Generation and Bandwidth Scaling of silicon modulator based Integrated High Repetition rate Optical Frequency Combs
Optical Frequency Combs (OFC) are laser sources that consist of discrete, equally spaced lines in frequency space, have found extensive use in metrology, spectroscopy, sensing and optical communications. Generation of ... -
Graphene and Graphyne based three dimensional porous architectures
The main objective of the thesis is to introduce porous structure into graphene/graphene oxide materials and study their effects on various physics/chemistry related applications. Introduction of porosity may be achieved ... -
Growth of hole-conducting Cu2O & CuO semiconductors using CVD for next-generation electronic devices: Thin Films Transistors, Memristors, and Gas Sensors
Semiconducting oxides with visible-range transparency and high electrical conductivity have tremendous potential for transparent CMOS devices. Oxide semiconducting materials are a good choice for emerging transparent ... -
Hardware-Software Co-Design Accelerators for Sparse BLAS
Sparse Basic Linear Algebra Subroutines (Sparse BLAS) is an important library. Sparse BLAS includes three levels of subroutines. Level 1, Level2 and Level 3 Sparse BLAS routines. Level 1 Sparse BLAS routines do computations ... -
Heterogeneous Integration of Device Grade Epitaxial Germanium on Silicon Platform using Laser-Induced Crystallization for Optoelectronic Applications
Integration of germanium on silicon platform has applications in III-V photovoltaics, integrated silicon photonics, high-speed transistors, etc. In this work, we have used laser-induced crystallization (LIC) to obtain ... -
Heterogeneous Integration of Functional Oxides on Silicon
The epitaxial growth of perovskite-structure oxide thin films on silicon (Si) substrates presents an avenue for integrating diverse electronic, optoelectronic, and acoustic functionalities into the well-established, ... -
Heterogeneous Integration of Thin-film Germanium on Silicon and Steel
Integration of germanium (Ge) on low cost substrates such as silicon and steel open several applications such as low cost III-V photovoltaics, beyond silicon CMOS and optoelectronics applications. However, growth of germanium ... -
High power Cascaded Raman fiber lasers
Over the last decade, fiber lasers have gained significant traction for industrial, defense and medical applications. This is owing to their superior beam quality along with power scalability, compactness, reliability and ... -
Improving Efficiency of Perovskite and Silicon Solar Cells by Reducing Surface Recombination, Bulk Recombination, and Thermalization Losses
Solar photovoltaic (PV) technology stands at the forefront of renewable energy solutions, driven by the urgent need to mitigate climate change and secure sustainable energy sources. As the demand for cleaner energy ... -
Integrating magnetic swimmer with fluorescent color centers
Nitrogen vacancy (NV) centers in diamonds are of current interest as quantum sensors, single photon sources, and biological nano-materials due to their unique optical and spin properties, bio-compatibility, and robust ... -
Integration of Functional Oxide Films on Semiconducting Substrates
System-on-chip (SoC) applications have attracted the attention of the modern community due to their ability to facilitate various functionalities within a single device which can meet the requirements of day-to-day life. ... -
Integration of Graphene with Plasmonic Nanostructures for Photodetection in the UV, Visible and IR
Graphene is the thinnest material known till date, composed of a two dimensional (2D) arrangement of carbon atoms in a hexagonal lattice. It has interesting mechanical, electrical and optical properties, such as very high ... -
Integration of Layered Materials with Group-III Nitride Semiconductors for Dual Band Photodetection
In many applications, simultaneous detection in two distinct bands, UV and IR regime is required. An instrumentation in which detection in both the bands achievable using single device would be highly desirable owing to ...