Browsing Centre for Nano Science and Engineering (CeNSE) by Title
Now showing items 66-85 of 154
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Gallium Oxide based High Voltage Diode : Design, Fabrication, Characterization and Modelling
High-efficiency power electronic devices intend to play a significant role in curbing global warming and enhancing energy conservation. Owing to its superior material properties, Gallium oxide (Ga2O3) has emerged as a new ... -
Gallium Oxide Vertical Power Devices - Modeling, Material Growth, and Hetero-epitaxial Integration with Silicon
𝛽-Ga2O3 is a candidate for a new generation of power semiconductors that can significantly lower the conduction losses and increase power density in the power converters. PFOM or power figure of merit (V2Br/Ron) is a ratio ... -
Generation and Bandwidth Scaling of silicon modulator based Integrated High Repetition rate Optical Frequency Combs
Optical Frequency Combs (OFC) are laser sources that consist of discrete, equally spaced lines in frequency space, have found extensive use in metrology, spectroscopy, sensing and optical communications. Generation of ... -
Graphene and Graphyne based three dimensional porous architectures
The main objective of the thesis is to introduce porous structure into graphene/graphene oxide materials and study their effects on various physics/chemistry related applications. Introduction of porosity may be achieved ... -
Growth of hole-conducting Cu2O & CuO semiconductors using CVD for next-generation electronic devices: Thin Films Transistors, Memristors, and Gas Sensors
Semiconducting oxides with visible-range transparency and high electrical conductivity have tremendous potential for transparent CMOS devices. Oxide semiconducting materials are a good choice for emerging transparent ... -
Hardware-Software Co-Design Accelerators for Sparse BLAS
Sparse Basic Linear Algebra Subroutines (Sparse BLAS) is an important library. Sparse BLAS includes three levels of subroutines. Level 1, Level2 and Level 3 Sparse BLAS routines. Level 1 Sparse BLAS routines do computations ... -
Heterogeneous Integration of Device Grade Epitaxial Germanium on Silicon Platform using Laser-Induced Crystallization for Optoelectronic Applications
Integration of germanium on silicon platform has applications in III-V photovoltaics, integrated silicon photonics, high-speed transistors, etc. In this work, we have used laser-induced crystallization (LIC) to obtain ... -
Heterogeneous Integration of Functional Oxides on Silicon
The epitaxial growth of perovskite-structure oxide thin films on silicon (Si) substrates presents an avenue for integrating diverse electronic, optoelectronic, and acoustic functionalities into the well-established, ... -
Heterogeneous Integration of Thin-film Germanium on Silicon and Steel
Integration of germanium (Ge) on low cost substrates such as silicon and steel open several applications such as low cost III-V photovoltaics, beyond silicon CMOS and optoelectronics applications. However, growth of germanium ... -
High power Cascaded Raman fiber lasers
Over the last decade, fiber lasers have gained significant traction for industrial, defense and medical applications. This is owing to their superior beam quality along with power scalability, compactness, reliability and ... -
Improving Efficiency of Perovskite and Silicon Solar Cells by Reducing Surface Recombination, Bulk Recombination, and Thermalization Losses
Solar photovoltaic (PV) technology stands at the forefront of renewable energy solutions, driven by the urgent need to mitigate climate change and secure sustainable energy sources. As the demand for cleaner energy ... -
Integrating magnetic swimmer with fluorescent color centers
Nitrogen vacancy (NV) centers in diamonds are of current interest as quantum sensors, single photon sources, and biological nano-materials due to their unique optical and spin properties, bio-compatibility, and robust ... -
Integration of Functional Oxide Films on Semiconducting Substrates
System-on-chip (SoC) applications have attracted the attention of the modern community due to their ability to facilitate various functionalities within a single device which can meet the requirements of day-to-day life. ... -
Integration of Graphene with Plasmonic Nanostructures for Photodetection in the UV, Visible and IR
Graphene is the thinnest material known till date, composed of a two dimensional (2D) arrangement of carbon atoms in a hexagonal lattice. It has interesting mechanical, electrical and optical properties, such as very high ... -
Integration of Layered Materials with Group-III Nitride Semiconductors for Dual Band Photodetection
In many applications, simultaneous detection in two distinct bands, UV and IR regime is required. An instrumentation in which detection in both the bands achievable using single device would be highly desirable owing to ... -
Integration of Resonant Plasmonic Nanostructures with 2D Materials: Strategies and Applications beyond the Visible regime
Plasmonics deals with the interaction of incident electromagnetic waves with the free electron gas within metal nanostructures, enabling rapid signal processing and the confinement of light into subwavelength scales, leading ... -
Internal resonances and nonlinearities in atomically thin resonators
The advent of carbon nanotubes (CNTs) and atomically thin membranes such as Graphene and layered transition metal chalcogenides (TMDs) have spurred research in the area of Nanoelectromechanical Systems (NEMS) due to their ... -
Investigating Mechanical Properties of Suspended Ovarian Cancer Cells and Clusters
The peritoneal cavity of a patient suffering from advanced epithelial ovarian cancer is filled with disseminated multicellular aggregates, commonly known as spheroids. These spheroids colonize abdominal organs leading to ... -
Investigating Microwave-Synthesized Nanoferrites as Core Materials for RF On-Chip Inductors
On-chip inductors play a major role in radio frequency integrated circuits (RFICs), finding applications in radio frequency microelectromechanical systems (RF MEMS), power-electronics, and biomedical MEMS. Despite advancements ... -
Investigation of Au-free AlGaN/GaN HEMT on Silicon with substrate transfer process: From Ohmic contacts to RF performance
The technological importance of III-nitride based high electron mobility transistors (HEMTs) for power switching and RF applications is growing rapidly, owing to two advantageous electrical properties. While high sheet ...