Browsing Centre for Nano Science and Engineering (CeNSE) by Title
Now showing items 89-108 of 154
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Large Area MoS2 : Growth and Device Characteristics
(2018-06-26)There has been growing interest in two-dimensional (2-D) crystals beyond graphene for next-generation nano-electronics. Transition metal dichalcogenides have been most widely studied, for their semiconducting characteristics ... -
Large Enhancement in Metal Film Piezoresistive Sensitivity with Local Inhomogenization for Nanoelectromechanical Systems
(2018-04-12)High performance and low cost sensors based on microelectromechanical systems (MEMS) have become commonplace in today's world. MEMS sensors, such as accelerometers, gy- roscopes, pressure sensors, and microphones, are ... -
Materials, Processes and Device Design for High Performance, Sub-thermionic MoS2 FETs
The shrinking of the field-effect transistor (FET), commonly termed CMOS scaling, has revolutionised the semiconductor industry and impacted most aspects of human life. However, this decades-long successful trend of scaling ... -
Microporous Membranes Derived using Crystallisation Induced Phase Separation in PVDF/PMMA (Polyvinylidene Fluoride/ Polymethyl Methacrylate) Blends in Presence of Multiwalled Carbon Nanotubes
(2018-03-10)Segmental chain dynamics in polymer blends is a very important topic, not only from a fundamental point of view but also from technological applications. Because of the difficulties in the commercialization of new polymers, ... -
Microwave synthesis of superparamagnetic cobalt-ferrite thin films for RF CMOS applications
In the era of 5G technologies, the emphasis is on getting all the devices, active or passive to work in high frequencies. Higher efficiency chips can be obtained by combining both the active and passive devices on a single ... -
MOCVD of MoS2: Nucleation Density, Lateral Growth Rate, and Coverage Dependence on Growth Variables
Scaling towards increasing miniaturization, as per the so-called Moore’s law, has governed electronics technology by the CMOS route over the past decades. 2D materials atomically thin crystalline layers are emerging ... -
Mode Coupling and Nonlinearities in Micro/Nano Electromechanical Systems
Micro and nanoelectromechanical systems have shown tremendous potential in applications ranging from sensing to obtaining ultrastable oscillators for timing. They have also opened avenues for fundamental quantum studies ... -
Mode Engineering in Micro Ring Resonators and Their Application
Silicon Photonics (SiP) has emerged as the prominent platform for Photonic Integrated Circuits (PICs). CMOS technology compatible fabrication processes, high index contrast of the waveguide core-cladding leading to sharp ... -
Molecular Dynamics Investigations of Hybrid Nanopores for Single Molecule DNA Sequencing
High throughput methods accelerate the drug discovery, biomolecule detection and sequencing applications pipeline. Single molecule detection technique facilitates the implementation of high throughput methods by eliminating ... -
Molecular Transport in Polyelectrolyte Multilayers
(2018-06-26)Layer-by-layer assembly of polyelectrolytes is a simple technique based on the self-assembly of polycations and polyanions mainly by electrostatic interactions, which has gained considerable scientific interest for its ... -
Multi-layered Composite Structures for Electromagnetic Interference Shielding Applications
With the recent surge in the usage of electronic devices, electromagnetic interference (EMI) poses a serious threat. Unwanted electromagnetic (EM) waves not only interfere with the normal functioning of electronic components, ... -
Multielectron Bubbles : A Curved Two-dimensional Electron System in Confinement
(2018-06-15)Electrons are weakly attracted to liquid helium due to the small but finite polarizability of helium atoms. However, they cannot enter the liquid unless their energy is more than 1 eV, due to the Pauli exclusion principle. ... -
Multiplexing Nanoplasmonic Sensors
Complex biological samples such as serum contain thousands of proteins and other molecules spanning up to 13 orders of magnitude in concentration. Present measurement techniques such as protein microarrays and quantum dot ... -
Multiscale Modeling of Quantum Transport in 2D Material Based MoS Transistors
Atomically thin 2D materials have ushered in a new era in the fi eld of nano-science and tech- nology and have been translated to notable advancements in the design of sensors, optoelectronic devices, exible electronics. ... -
Nano-Scale Design, Fabrication, and Performance Evaluation of Organic Photovoltaic Devices
Organic photovoltaic devices have evinced interest due to the prospects of integrating strongly absorbing semiconducting polymers in flexible, light weight device platforms with ease of fabrication. However, there are ... -
Nanopore Based Single-molecule Sensors
In the past two decades nanopores have been used as highly sensitive detection systems for exploring the properties of analytes at single molecule resolution. The small dimensions of a nanopore permit the molecule of ... -
Nanostructured Hybrids with Engineered Interfaces for Efficient Electro, Photo and Gas Phase Catalytic Reactions
(2018-07-18)Catalysis using nanostructures has been a topic of substantial interest for fundamental studies and for practical applications in energy and environmental sectors. The growing demand for production of energy and in the ... -
Nanostructured Metal Oxide Semiconductor Gas Sensor
Gas sensors play a vital role in today’s world; be it in pollution monitoring, breath analysis, food quality monitoring or in agriculture. A variety of methods are being explored to develop reliable gas sensor systems such ... -
Neuro-electronic Hybrid Systems
Artificial neural networks have provided a powerful motif to implement extremely complex functions of high dimensional inputs like images and text. These are now being used to directly control robotic systems, to enable ... -
Next Generation High Electron Mobility Transistor based on InGaN Quantum Well Channel
In past two decades and more, III-N based high electron mobility transistors (HEMTs) have generally used GaN as the channel layer. During this period, the quest for operating it at higher frequencies has resulted in the ...