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Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy
(2016-04-18)
Group III-nitride semiconductors have received much research attention and witnessed a significant development due to their ample applications in solid-state lighting and high-power/high-frequency electronics. Numerous ...
Rational Design of Advanced Hybrid Nanostructures for Catalysis and Electrocatalysis
(2017-11-28)
The hybrid nanostructures exhibit excellent performances in various fields such as catalysis, sensing, and energy conversion as compared to their individual ones. The thesis deals with the new methods for the synthesis of ...
Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si
(2017-11-23)
Gallium Nitride (GaN) and its alloys with InN and AlN, the III-nitrides, are of interest for a variety of high power-high frequency electronics and optoelectronics applications. However, unlike Si and GaAs technology that ...
Thermal Oxidation Strategies for the Synthesis of Binary Oxides and their Applications
(2017-12-12)
Binary oxides constitute an outstanding class of functional materials with potential applications in many fields such as catalysis, gas sensing, field emission, solar cells, photodetection, etc. Due to the difference in ...
Group III Nitride/p-Silicon Heterojunctions By Plasma Assisted Molecular Beam Epitaxy
(2015-07-24)
The present work focuses on the growth and characterizations of GaN and InN layers and nanostructures on p-Si(100) and p-Si(111) substrates by plasma-assisted molecular beam epitaxy and the studies of GaN/p-Si and InN/p-Si ...
Investigation of Structural and Electronic Aspects of Ultrathin Metal Nanowires
(2018-02-11)
The constant trend of device miniaturization along with ever-growing list of unusual behaviour of nanoscale materials has fuelled the recent research in fabrication and applications of ultrathin (~2 nm diameter) nanowires. ...
Semipolar And Nonpolar Group III-Nitride Heterostructures By Plasma-Assisted Molecular Beam Epitaxy
(2015-09-08)
Group III-nitride semiconductors are well suited for the fabrication of devices including visible-ultraviolet light emitting diodes, high-temperature and high-frequency devices. The wurtzite III-nitride based heterostructures ...
Study Of Relaxor Ferroelectric PMN-PT Thin Films For Energy Harvesting Applications
(2015-08-06)
The present research work mainly focuses on the fabrication of 0.85PMN-0.15PT thin film relaxor ferroelectrics for energy harvesting applications.
Chapter 1 gives a brief review about why energy harvesting is required ...
Graphene Nanostructures : A Theoretical Study Of Electronic, Magnetic And Structural Properties
(2014-09-26)
Graphene is a single layer of carbon atoms arranged in honeycomb lattice. Over a long period of time it was treated as a hypothetical material to understand the properties of other allotropes of carbon, such as graphite, ...
Phase Transformation Behavior Of Embedded Bimetallic Nanoscaled Alloy Particles In Immiscible Matrices
(2017-02-16)
The aim of the present thesis is to understand the phase transformation behavior of embedded alloy nanoparticles embedded in immiscible matrices. Embedded alloy inclusions have been dispersed in immiscible matrix via rapid ...