Browsing Division of Mechanical Sciences by Subject "Gallium Nitride"
Now showing items 1-2 of 2
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Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD
(2017-09-20)Group III-Nitrides (GaN, InN & AlN) are considered one of the most important class of semiconducting materials after Si and GaAs. The excellent optical and electrical properties of these nitrides result in numerous ... -
TEM Characterization of Microstructural Evolution of GaN Grown by MOCVD on c-Sapphire
III-Nitrides (AlN, GaN, InN) find use in the high-power high frequency applications. Bulk GaN substrates are difficult to grow, therefore the GaN based structures must be grown on foreign substrates. In this thesis, ...