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Towards the development of open-chip digital microfluidics platform
Manipulating and utilizing fluid flows at microscale provides several opportunities towards technological advancement in different domains such as (but not limited to) lab-on-chip devices for mimicking biological laboratory ...
Engineering Nano-Electronic Devices using 2-D Materials: CMOS Logic to Biosensing
Technology scaling has driven the development of semiconductor technology that forms a
ubiquitous part of daily utilities such as smartphones, computers, and wearables. However,
efforts to continue scaling have met ...
Tailored Synthesis of Hexagonal Boron Nitride: Chemical Vapor Deposition and Next Generation Devices
The introduction of two dimensional (2D) materials in electronic device applications
has provided a platform for several new device concepts and
architectures. Hexagonal boron nitride (hBN) is the only insulator in the ...
Advanced Architectures for Cascaded Raman Fiber Lasers
Fiber lasers have exhibited significant expansion in their diverse applications within the fields
of communications, industrial operations, defence, and the medical sector. They require a rare
earth doped element as ...
Development and Characterization of Multi-finger GaN HEMT for Power switching applications
Power electronics is the branch that connects electricity and the world. Power devices play a significant role in reducing CO2 emissions and saving energy. As technology develops, the main focus is reducing energy consumption, ...
Development of High-Performance Piezoelectric Micromachined Transducers for Near Ultrasound
Near-ultrasound refers to sound with frequencies just above the range of human hearing, from about 18 to 40 kHz. This band is rarely used for typical ultrasound applications and is ignored for all except the most demanding ...
Investigation of Growth, Structural and Optical properties of different phases of Ga2O3
Among the semiconducting sesquioxides, Ga2O3 has attracted considerable research attention
in recent years due to its excellent properties, including direct ultra wide band gap, optical
transparency, high excitonic binding ...
Investigation of Au-free AlGaN/GaN HEMT on Silicon with substrate transfer process: From Ohmic contacts to RF performance
The technological importance of III-nitride based high electron mobility transistors (HEMTs) for power switching and RF applications is growing rapidly, owing to two advantageous electrical properties. While high sheet ...
Heterogeneous Integration of Functional Oxides on Silicon
The epitaxial growth of perovskite-structure oxide thin films on silicon (Si) substrates presents an avenue for integrating diverse electronic, optoelectronic, and acoustic functionalities into the well-established, ...
Architectures for linewidth reduction in cascaded Raman fiber lasers and applications
Fiber lasers have been increasingly used as a high-power source due to several advantages, such as superior beam quality, better thermal management, high efficiency, and compact and reliable design. In fiber lasers, ...