Browsing Centre for Nano Science and Engineering (CeNSE) by Subject "HEMT"
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Investigation of Buffer Design and Carbon doping in AlGaN/GaN HEMTs for High Breakdown Voltages
III-nitride HEMTs are strong contenders for next-generation power electronic applications. The superior material and electrical properties render GaN-based transistors suitable for high-power switching. The material ... -
Normally off AlxGa(1-x)N/GaN devices: Materials, process and device architecture innovations
AlxGa(1-x)N/GaN HEMTs find applications in power electronics systems as high-frequency power switches. The formation of a highly mobile 2 dimensional electron gas (2DEG) at a heterointerface in an otherwise insulating wide ...