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    •   etd@IISc
    • Division of Interdisciplinary Research
    • Centre for Nano Science and Engineering (CeNSE)
    • Browsing Centre for Nano Science and Engineering (CeNSE) by Subject
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    Browsing Centre for Nano Science and Engineering (CeNSE) by Subject "HEMT"

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      • Deeply Scaled InAlN/GaN-on-Silicon High Electron Mobility Transistors for RF Applications 

        Vanjari, Sai Charan
        Wide bandgap gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising candidates for next-generation radio frequency (RF) power amplifier applications owing to high electron saturation velocity ...
      • Development and Characterization of Multi-finger GaN HEMT for Power switching applications 

        Baby, Rijo
        Power electronics is the branch that connects electricity and the world. Power devices play a significant role in reducing CO2 emissions and saving energy. As technology develops, the main focus is reducing energy consumption, ...
      • Investigation of Buffer Design and Carbon doping in AlGaN/GaN HEMTs for High Breakdown Voltages 

        Remesh, Nayana
        III-nitride HEMTs are strong contenders for next-generation power electronic applications. The superior material and electrical properties render GaN-based transistors suitable for high-power switching. The material ...
      • Normally off AlxGa(1-x)N/GaN devices: Materials, process and device architecture innovations 

        Soman, Rohith
        AlxGa(1-x)N/GaN HEMTs find applications in power electronics systems as high-frequency power switches. The formation of a highly mobile 2 dimensional electron gas (2DEG) at a heterointerface in an otherwise insulating wide ...

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