Browsing Centre for Nano Science and Engineering (CeNSE) by Subject "Gallium Nitride"
Now showing items 1-2 of 2
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Development and Characterization of Multi-finger GaN HEMT for Power switching applications
Power electronics is the branch that connects electricity and the world. Power devices play a significant role in reducing CO2 emissions and saving energy. As technology develops, the main focus is reducing energy consumption, ... -
Investigation of Buffer Design and Carbon doping in AlGaN/GaN HEMTs for High Breakdown Voltages
III-nitride HEMTs are strong contenders for next-generation power electronic applications. The superior material and electrical properties render GaN-based transistors suitable for high-power switching. The material ...