Browsing Centre for Nano Science and Engineering (CeNSE) by Subject "Epitaxial Integration on Silicon"
Now showing items 1-1 of 1
-
Gallium Oxide Vertical Power Devices - Modeling, Material Growth, and Hetero-epitaxial Integration with Silicon
𝛽-Ga2O3 is a candidate for a new generation of power semiconductors that can significantly lower the conduction losses and increase power density in the power converters. PFOM or power figure of merit (V2Br/Ron) is a ratio ...