Browsing Centre for Nano Science and Engineering (CeNSE) by Subject "AlGaN/GaN"
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Development of Recessed-gate Normally-off Al(x)Ga(1-x)N/GaN HEMTs for Power Applications
The push for higher efficiency and power density in power electronics has accelerated the development of AlGaN/GaN high-electron-mobility transistors (HEMTs). The formation of a two-dimensional electron gas (2DEG) at the ...