Showing items related by title, author, creator and subject.

• Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy 

  Roul, Basanta Kumar (2016-04-18)

  Group III-nitride semiconductors have received much research attention and witnessed a significant development due to their ample applications in solid-state lighting and high-power/high-frequency electronics. Numerous ...

• Group III-Nitride Epi And Nanostructures On Si(111) By Molecular Beam Epitaxy 

  Mahesh Kumar, * (2014-11-18)

  The present work has been focused on the growth of Group III-nitride epitaxial layers and nanostructures on Si (111) substrates by plasma-assisted molecular beam epitaxy. Silicon is regarded as a promising substrate for ...

• Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives 

  Chandrasekar, Hareesh (2017-10-31)

  Group III-A nitrides (GaN, AlN, InN and alloys) are materials of considerable contemporary interest and currently enable a wide variety of optoelectronic and high-power, high-frequency electronic applications. All of these ...