Browsing Materials Research Centre (MRC) by Subject "High Electron Mobility Transistors"
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Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si
(2017-11-23)Gallium Nitride (GaN) and its alloys with InN and AlN, the III-nitrides, are of interest for a variety of high power-high frequency electronics and optoelectronics applications. However, unlike Si and GaAs technology that ...