Browsing Materials Research Centre (MRC) by Subject "GaN"
Now showing items 1-5 of 5
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Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si
(2017-11-23)Gallium Nitride (GaN) and its alloys with InN and AlN, the III-nitrides, are of interest for a variety of high power-high frequency electronics and optoelectronics applications. However, unlike Si and GaAs technology that ... -
Epitaxial Nonpolar III-Nitrides by Plasma-Assisted Molecular Beam Epitaxy
(2018-08-09)The popularity of III-nitride materials has taken up the semiconductor industry to newer applications because of their remarkable properties. In addition to having a direct and wide band gap of 3.4 eV, a very fascinating ... -
III- Nitride Thin Films and Nanostructures on Si(111) by Plasma Assisted Molecular Beam Epitaxy
This thesis focuses on studying heterostructures of GaN, Silicon and AlN. GaN nanostructures are grown on bare Si (111) with and without a GaN buffer layer and GaN film was grown on an AlN layer. Apart from the material ... -
InGaN Based 2D, 1D and 0D Heterostructures on Si(111) by Plasma Assisted Molecular Beam Epitaxy
The present research work focuses on the growth and characterization of group III-Nitride (InGaN) epitaxial layers as well as nanostructures on Si(111) substrates. The growth system used in this study was a plasma-assisted ... -
Properties And Applications Of Semiconductor And Layered Nanomaterials
(2014-04-07)This thesis deals with the research work carried out on the properties and applications such as GaN nanoparticles, Graphene etc. Chapter 1 of the thesis gives introduction to nanomaterials and various aspects of the ...