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    Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si 

    Mohan, Nagaboopathy (2017-11-23)
    Gallium Nitride (GaN) and its alloys with InN and AlN, the III-nitrides, are of interest for a variety of high power-high frequency electronics and optoelectronics applications. However, unlike Si and GaAs technology that ...

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    AuthorMohan, Nagaboopathy (1)SubjectDislocation Reduction (1)Gallium Nitride (1)Gallium Nitride Alloys (1)Gallium Nitride on Silicon (1)Gallium Nitrides (1)
    GaN (1)
    High Electron Mobility Transistors (1)
    Materials Science (1)
    Si Doping (1)... View MoreDate Issued
    2017 (1)
    Has File(s)
    Yes (1)

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