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    InGaN Based 2D, 1D and 0D Heterostructures on Si(111) by Plasma Assisted Molecular Beam Epitaxy 

    Chandan, Greeshma K
    The present research work focuses on the growth and characterization of group III-Nitride (InGaN) epitaxial layers as well as nanostructures on Si(111) substrates. The growth system used in this study was a plasma-assisted ...

    Properties And Applications Of Semiconductor And Layered Nanomaterials 

    Chitara, Basant (2014-04-07)
    This thesis deals with the research work carried out on the properties and applications such as GaN nanoparticles, Graphene etc. Chapter 1 of the thesis gives introduction to nanomaterials and various aspects of the ...

    Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si 

    Mohan, Nagaboopathy (2017-11-23)
    Gallium Nitride (GaN) and its alloys with InN and AlN, the III-nitrides, are of interest for a variety of high power-high frequency electronics and optoelectronics applications. However, unlike Si and GaAs technology that ...

    Epitaxial Nonpolar III-Nitrides by Plasma-Assisted Molecular Beam Epitaxy 

    Mukundan, Shruti (2018-08-09)
    The popularity of III-nitride materials has taken up the semiconductor industry to newer applications because of their remarkable properties. In addition to having a direct and wide band gap of 3.4 eV, a very fascinating ...

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    AuthorChandan, Greeshma K (1)Chitara, Basant (1)Mohan, Nagaboopathy (1)Mukundan, Shruti (1)Subject
    GaN (4)
    Materials Science (4)
    InGaN (2)AlN (1)AlN/Si (111) (1)Dislocation Reduction (1)Gallium Nitride (1)Gallium Nitride Alloys (1)Gallium Nitride Nanoparticles (1)Gallium Nitride on Silicon (1)... View MoreDate Issued2014 (1)2017 (1)2018 (1)Has File(s)Yes (4)

    etd@IISc is a joint service of SERC & J R D Tata Memorial (JRDTML) Library || Powered by DSpace software || DuraSpace
    Contact Us | Send Feedback | Thesis Templates
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