| dc.description.abstract | This thesis is a report of experiments made with a sample and a new approach to fabricating silicon devices in cylindrical configuration by co-drawing of two materials together at high temperatures. The co-drawing of silicon and silicon dioxide together presents the material directly for the fabrication of MOS devices. X-ray measurements show that silicon is single crystalline in nature and the same orientation is maintained throughout the length of the fibre. Results on experimental measurements made on metal-oxide-semiconductor devices fabricated offer high transconductances, a large current-carrying capability, and substantial amplifications. Good capacitance-voltage curves are observed with no built-in oxide charges. A number of possibilities of realising various types of devices like simple amplifiers, series array of p-n junctions, microwave devices, and soliton generators have been examined.
The thesis entitled "Studies on the Preparation and Semiconductor Properties of Clad Silicon Fibres" by Mallika Verma submitted to the Indian Institute of Science, Bangalore for the degree of Ph.D.
This thesis is a report of some novel and unconventional approaches to device fabrication without necessarily going through the planar fabrication techniques. Basically, the feasibility of drawing silicon in the form of fine fibres with an outside insulator layer, SiO? (cladding), is explored. The co-drawing of silicon and silicon dioxide to form fine single crystalline SiO?-clad-Si fibres presents the material directly for the fabrication of MOS devices. X-ray measurements show that the internal core (silicon) is single crystalline in nature and the same orientation is maintained throughout the length of the fibre. Results on experimental measurements made on metal-oxide-semiconductor devices fabricated offer high transconductances, a large current-carrying capability, and substantial amplifications which can be improved further. Good capacitance-voltage curves are observed with no built-in oxide charges.
A number of possibilities of realising various types of devices like simple RC amplifiers, series array of p-n junctions, microwave devices, and solitons have been examined. There are prospects of realising active transmission lines, series array detectors, solar cells, possibility of integrating with fibre optic devices, IR detectors, three-dimensional circuits, and also sub-micron structures. | |
