Study of group 1B impurities in silicon and Gallium arsenide and photoquenching effect of EL2 defect in Gallium arsenide

dc.contributor.advisor	Vikram Kumar
dc.contributor.author	Pandian, V
dc.date.accessioned	2026-01-01T10:01:59Z
dc.date.available	2026-01-01T10:01:59Z
dc.date.submitted	1990
dc.identifier.uri	https://etd.iisc.ac.in/handle/2005/8087
dc.description.abstract	No Abstract
dc.language.iso	en_US
dc.relation.ispartofseries	T02961
dc.rights	I grant Indian Institute of Science the right to archive and to make available my thesis or dissertation in whole or in part in all forms of media, now hereafter known. I retain all proprietary rights, such as patent rights. I also retain the right to use in future works (such as articles or books) all or part of this thesis or dissertation
dc.subject	Deep Level Transient Spectroscopy
dc.subject	Photoconductivity and Photoluminescence
dc.subject	Persistent photocurrent quenching
dc.title	Study of group 1B impurities in silicon and Gallium arsenide and photoquenching effect of EL2 defect in Gallium arsenide
dc.degree.name	PhD
dc.degree.level	Doctoral
dc.degree.grantor	Indian Institute of Science
dc.degree.discipline	Science