Browsing Physics (PHY) by Subject "High-k ZrO2 Gate Dielectrics"
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Facile and Process Compatible Growth of High-k Gate Dielectric Materials (TiO2, ZrO2 and HfO2) on Si and the Investigation of these Oxides and their Interfaces by Deep Level Transient Spectroscopy
(2018-07-14)The continuous downscaling has enforced the device size and oxide thickness to few nanometers. After serving for several decades as an excellent gate oxide layer in complementary metal oxide semiconductor (CMOS) devices, ...