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dc.contributor.advisorRaghavan, Srinivasan
dc.contributor.authorChandrasekar, Hareesh
dc.date.accessioned2017-10-31T07:13:50Z
dc.date.accessioned2018-07-30T15:09:24Z
dc.date.available2017-10-31T07:13:50Z
dc.date.available2018-07-30T15:09:24Z
dc.date.issued2017-10-31
dc.date.submitted2016
dc.identifier.urihttps://etd.iisc.ac.in/handle/2005/2740
dc.identifier.abstracthttp://etd.iisc.ac.in/static/etd/abstracts/3567/G27837-Abs.pdfen_US
dc.description.abstractGroup III-A nitrides (GaN, AlN, InN and alloys) are materials of considerable contemporary interest and currently enable a wide variety of optoelectronic and high-power, high-frequency electronic applications. All of these applications utilize device structures that employ a single or multiple hetero-junctions, with material compositions varying across the interface. For example, the workhorse of GaN based electronic devices is the high electron mobility transistor (HEMT) which is usually composed of an AlGaN/GaN hetero-junction, where a two-dimensional electron gas (2DEG) is formed due to differences in polarization between the two layers. In addition to such hetero-junctions in the same material family, formation of hetero-interfaces in nitrides begins right from the epitaxy of the very first layer due to the lack of native substrates for their growth. The consequences of such "dissimilar" hetero-junctions typically manifest as large defect densities at this interface which in turn gives rise to defective films. Additionally, if the substrate is also a semiconductor, the electrical properties at such dissimilar semiconductor-nitride hetero-junctions are particularly important in terms of their influence on the performance of nitride devices. Nevertheless, the large defect densities at such dissimilar 3D-3D semiconductor interfaces, which translate into more trap states, also prevents them from being used as active device layers to say nothing of reliability considerations arising because of these defects. Recently, the advent of 2D materials such as graphene and MoS2 has opened up avenues for Van der Waal’s epitaxy of these layered films with practically any other material. Such defect-free integration enables dissimilar semiconductor hetero-junctions to be used as active device layers with carrier transport across the 2D-3D hetero-interface. This thesis deals with hetero-epitaxial growth platforms for reducing defect densities, and the material and electrical properties of dissimilar hetero-junctions with the group III-A nitride material system.en_US
dc.language.isoen_USen_US
dc.relation.ispartofseriesG27837en_US
dc.subjectGroup III-A Nitridesen_US
dc.subjectHigh Electron Mobility Transistoren_US
dc.subjectNitride Semiconductorsen_US
dc.subjectAluminium Nitride-Silicon Interfaceen_US
dc.subjectGallium Nitride Filmsen_US
dc.subjectAluminium Nitride Thin Filmsen_US
dc.subjectNitride Filmsen_US
dc.subjectNitride Epitaxyen_US
dc.subjectNitride Hetero-Interfacesen_US
dc.subjectAluminium Nitride (AlN) Epitaxial Layersen_US
dc.subjectGaN Filmsen_US
dc.subjectAlN/Si Hetero-interfaceen_US
dc.subjectAlN-Si Interfaceen_US
dc.subject.classificationMaterials Scienceen_US
dc.titleDissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectivesen_US
dc.typeThesisen_US
dc.degree.namePhDen_US
dc.degree.levelDoctoralen_US
dc.degree.disciplineFaculty Of Engineeringen_US


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