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Growth Of Epilayers Of GaAs And AlxGa1-x As By MOVPE And Their Characterization

dc.contributor.advisorShivashankar, S A
dc.contributor.authorPaul, Shashi
dc.date.accessioned2013-09-05T09:22:14Z
dc.date.accessioned2018-07-30T15:09:04Z
dc.date.available2013-09-05T09:22:14Z
dc.date.available2018-07-30T15:09:04Z
dc.date.issued2013-09-05
dc.date.submitted1995
dc.identifier.urihttps://etd.iisc.ac.in/handle/2005/2233
dc.identifier.abstracthttp://etd.iisc.ac.in/static/etd/abstracts/2846/G14056-Abs.pdfen_US
dc.language.isoen_USen_US
dc.relation.ispartofseriesG14056en_US
dc.subjectAluminium-Gallium Arsenideen_US
dc.subjectSemiconductorsen_US
dc.subjectOptoelectronicsen_US
dc.subjectGallium Arsenide Semiconductorsen_US
dc.subjectMetalorganic Vapor Phase Epitaxy (MOVPE)en_US
dc.subjectAlGaAsen_US
dc.subjectGaAsen_US
dc.subject.classificationElectronic Engineeringen_US
dc.titleGrowth Of Epilayers Of GaAs And AlxGa1-x As By MOVPE And Their Characterizationen_US
dc.typeThesisen_US
dc.degree.nameMSen_US
dc.degree.levelMastersen_US
dc.degree.disciplineFaculty of Scienceen_US


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