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Some Studies On Interface States In GaAs MESFET's & HJFET's

dc.contributor.advisorKumar, Vikram
dc.contributor.advisorVenkataraman, V
dc.contributor.authorBalakrishnan, V R
dc.date.accessioned2013-07-24T10:12:02Z
dc.date.accessioned2018-07-31T06:18:13Z
dc.date.available2013-07-24T10:12:02Z
dc.date.available2018-07-31T06:18:13Z
dc.date.issued2013-07-24
dc.date.submitted1997
dc.identifier.urihttps://etd.iisc.ac.in/handle/2005/2141
dc.identifier.abstracthttp://etd.iisc.ac.in/static/etd/abstracts/2747/G15018-Abs.pdfen_US
dc.language.isoen_USen_US
dc.relation.ispartofseriesG15018en_US
dc.subjectMetal Semiconductor Field Effect (MESFET)en_US
dc.subjectHeterojunction Field Effect Transistor (HJFET)en_US
dc.subjectGallium Arsenide Semiconductorsen_US
dc.subjectGaAs MESFET'Sen_US
dc.subjectPseudomorphic HJFET'Sen_US
dc.subject.classificationElectronic Engineeringen_US
dc.titleSome Studies On Interface States In GaAs MESFET's & HJFET'sen_US
dc.typeThesisen_US
dc.degree.namePhDen_US
dc.degree.levelDoctoralen_US
dc.degree.disciplineFaculty of Scienceen_US


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