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Cryomilled Group IV elements (Silicon & Germanium) for optoelectronic applications
Group IV elements such as silicon and germanium are elemental semiconductors and lead to the evolution of modern electronic applications. Synthesis of contamination-free nanoparticles of these materials in bulk quantity ...
Study of Micro-and Nano-Scale Transport of Liquid Metal on Thin Solid Films
In recent times, researchers have found potential in using liquid metals in broad-spectrum applications such as processing ceramics, stretchable electronics, 3D printing, coolant technology, energy storage, and many others. ...
Versatile sensing platform using silicon photonic microring resonators
Measurement of refractive indices of liquids and thin films can play an important
role for chemical analysis in the fields of healthcare and biomedical research.
There is a requirement of miniaturized refractive index ...
Investigation of Growth, Structural and Optical properties of different phases of Ga2O3
Among the semiconducting sesquioxides, Ga2O3 has attracted considerable research attention
in recent years due to its excellent properties, including direct ultra wide band gap, optical
transparency, high excitonic binding ...
Development of High-Performance Piezoelectric Micromachined Transducers for Near Ultrasound
Near-ultrasound refers to sound with frequencies just above the range of human hearing, from about 18 to 40 kHz. This band is rarely used for typical ultrasound applications and is ignored for all except the most demanding ...
Investigation of Au-free AlGaN/GaN HEMT on Silicon with substrate transfer process: From Ohmic contacts to RF performance
The technological importance of III-nitride based high electron mobility transistors (HEMTs) for power switching and RF applications is growing rapidly, owing to two advantageous electrical properties. While high sheet ...
Towards the development of open-chip digital microfluidics platform
Manipulating and utilizing fluid flows at microscale provides several opportunities towards technological advancement in different domains such as (but not limited to) lab-on-chip devices for mimicking biological laboratory ...
Deeply Scaled InAlN/GaN-on-Silicon High Electron Mobility Transistors for RF Applications
Wide bandgap gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising candidates for next-generation radio frequency (RF) power amplifier applications owing to high electron saturation velocity ...
Tailored Synthesis of Hexagonal Boron Nitride: Chemical Vapor Deposition and Next Generation Devices
The introduction of two dimensional (2D) materials in electronic device applications
has provided a platform for several new device concepts and
architectures. Hexagonal boron nitride (hBN) is the only insulator in the ...
Engineering Nano-Electronic Devices using 2-D Materials: CMOS Logic to Biosensing
Technology scaling has driven the development of semiconductor technology that forms a
ubiquitous part of daily utilities such as smartphones, computers, and wearables. However,
efforts to continue scaling have met ...