Browsing Division of Interdisciplinary Research by Subject "semi-insulating silicon carbide"
Now showing items 1-1 of 1
-
Deeply Scaled InAlN/GaN-on-Silicon High Electron Mobility Transistors for RF Applications
Wide bandgap gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising candidates for next-generation radio frequency (RF) power amplifier applications owing to high electron saturation velocity ...