Browsing Division of Interdisciplinary Research by Subject "GaN"
Now showing items 1-3 of 3
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Deeply Scaled InAlN/GaN-on-Silicon High Electron Mobility Transistors for RF Applications
Wide bandgap gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising candidates for next-generation radio frequency (RF) power amplifier applications owing to high electron saturation velocity ... -
Development of Recessed-gate Normally-off Al(x)Ga(1-x)N/GaN HEMTs for Power Applications
The push for higher efficiency and power density in power electronics has accelerated the development of AlGaN/GaN high-electron-mobility transistors (HEMTs). The formation of a two-dimensional electron gas (2DEG) at the ... -
Investigation of Au-free AlGaN/GaN HEMT on Silicon with substrate transfer process: From Ohmic contacts to RF performance
The technological importance of III-nitride based high electron mobility transistors (HEMTs) for power switching and RF applications is growing rapidly, owing to two advantageous electrical properties. While high sheet ...