Browsing Division of Interdisciplinary Research by Author "Singh, Vikash Kumar"
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Next Generation High Electron Mobility Transistor based on InGaN Quantum Well Channel
Singh, Vikash KumarIn past two decades and more, III-N based high electron mobility transistors (HEMTs) have generally used GaN as the channel layer. During this period, the quest for operating it at higher frequencies has resulted in the ...