Browsing Division of Interdisciplinary Research by Advisor "Nath, Digbijoy N"
Now showing items 1-10 of 10
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Deeply Scaled InAlN/GaN-on-Silicon High Electron Mobility Transistors for RF Applications
Wide bandgap gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising candidates for next-generation radio frequency (RF) power amplifier applications owing to high electron saturation velocity ... -
Development and Characterization of Multi-finger GaN HEMT for Power switching applications
Power electronics is the branch that connects electricity and the world. Power devices play a significant role in reducing CO2 emissions and saving energy. As technology develops, the main focus is reducing energy consumption, ... -
Gallium Oxide based High Voltage Diode : Design, Fabrication, Characterization and Modelling
High-efficiency power electronic devices intend to play a significant role in curbing global warming and enhancing energy conservation. Owing to its superior material properties, Gallium oxide (Ga2O3) has emerged as a new ... -
Integration of Layered Materials with Group-III Nitride Semiconductors for Dual Band Photodetection
In many applications, simultaneous detection in two distinct bands, UV and IR regime is required. An instrumentation in which detection in both the bands achievable using single device would be highly desirable owing to ... -
Investigation of Au-free AlGaN/GaN HEMT on Silicon with substrate transfer process: From Ohmic contacts to RF performance
The technological importance of III-nitride based high electron mobility transistors (HEMTs) for power switching and RF applications is growing rapidly, owing to two advantageous electrical properties. While high sheet ... -
Investigation of Buffer Design and Carbon doping in AlGaN/GaN HEMTs for High Breakdown Voltages
III-nitride HEMTs are strong contenders for next-generation power electronic applications. The superior material and electrical properties render GaN-based transistors suitable for high-power switching. The material ... -
Investigation of Growth, Structural and Optical properties of different phases of Ga2O3
Among the semiconducting sesquioxides, Ga2O3 has attracted considerable research attention in recent years due to its excellent properties, including direct ultra wide band gap, optical transparency, high excitonic binding ... -
Next Generation High Electron Mobility Transistor based on InGaN Quantum Well Channel
In past two decades and more, III-N based high electron mobility transistors (HEMTs) have generally used GaN as the channel layer. During this period, the quest for operating it at higher frequencies has resulted in the ... -
Two-dimensional materials based artificial synapses for neuromorphic applications
The need and demand for continuous high-speed, energy-efficient hardware advancement is undisputed. Traditional computing system with von Neumann architecture leads to high energy consumption and latency due to a huge ... -
Ultra-wide Band-gap Semiconductor Heterostructures for UV Opto-electronics
A plethora of strategic, astronomical, commercial, and biological applications necessitate development of high-performance ultra-violet (UV) photodetectors to enable sensitive detection of low intensity UV signals. While ...