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    Design, Analysis And Characterization Of Torsional MEMS Varactor 

    Venkatesh, C (2010-10-11)
    Varactors form an important part of many communication circuits. They are utilized in oscillators, tunable matching networks, tunable filters and phase-shifters. This thesis deals with the design, analysis, characterization ...

    Studies In Micro Interconnections In Printed Wiring Board 

    Bhat, Shriram N (2010-08-30)
    Trend towards downsizing the product size and at the same time to bring more functionality in electronic products, demands electrically interconnecting several miniaturized electronic components with high counts of I\Os ...

    Analytical Modeling Of Quantum Thershold Voltage For Short Channel Multi Gate Silicon Nanowire Transistors 

    Kumar, P Rakesh (2010-12-29)
    Silicon nanowire based multiple gate metal oxide field effect transistors(MG-MOSFET) appear as replacements for conventional bulk transistors in post 45nm technology nodes. In such transistors the short channel effect(SCE) ...

    Impact Of Body Center Potential On The Electrostatics Of Undoped Body Multi Gate Transistors : A Modeling Perspective 

    Ray, Biswajit (2010-07-09)
    Undoped body multi gate (MG) Metal Oxide Semiconductor Field Effect Transistors (MOSFET) are appearing as replacements for single gate bulk MOSFET in forthcoming sub-45nm technology nodes. It is therefore extremely necessary ...

    Sub-Threshold Slope Modeling & Gate Alignment Issues In Tunnel Field Effect Transistor 

    Ramesha, A (2010-07-26)
    The Tunnel Field Effect Transistor (TFET) with sub-60mV/decade Sub-threshold slope and extremely high ION/IOFF ratio has attracted enough attention for low standby power (LSTP) applications where the battery life is very ...

    Impact Of Energy Quantization On Single Electron Transistor Devices And Circuits 

    Dan, Surya Shankar (2010-04-06)
    Although scalingof CMOS technology has been predicted to continue for another decade, novel technological solutions are required to overcome the fundamental limitations of the decananometer MOS transistors. Single Electron ...

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    AuthorBhat, Shriram N (1)Dan, Surya Shankar (1)Kumar, P Rakesh (1)Ramesha, A (1)Ray, Biswajit (1)Venkatesh, C (1)Subject
    Electronic Engineering (6)
    Double Gate Transistor (2)Transistors - Modeling (2)Band-to-Band Tunneling (1)Build-up Multilayer (BuM) (1)Build-up Multilayer Technology (1)Compact Modeling (1)Coulomb Blockade (1)Cylindrical Gate All-around Transistor (1)Cylindrical Gate Transistor (1)... View MoreDate Issued
    2010 (6)
    Has File(s)Yes (6)

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