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Study Of Transport Behaviour Of P-GaAs/N-GaAs EPI-Junctions

dc.contributor.advisorKrupanidhi, S B
dc.contributor.authorMahajan, Sonia
dc.date.accessioned2012-04-30T10:02:22Z
dc.date.accessioned2018-07-30T15:08:49Z
dc.date.available2012-04-30T10:02:22Z
dc.date.available2018-07-30T15:08:49Z
dc.date.issued2012-04-30
dc.date.submitted1999
dc.identifier.urihttps://etd.iisc.ac.in/handle/2005/1671
dc.identifier.abstracthttp://etd.iisc.ac.in/static/etd/abstracts/2162/G15456-Abs.pdfen_US
dc.language.isoen_USen_US
dc.relation.ispartofseriesG15456en_US
dc.subjectGallium Semiconductorsen_US
dc.subjectP-gallium Arsenideen_US
dc.subjectGaAsen_US
dc.subjectP-N Junctionsen_US
dc.subject.classificationElectronic Engineeringen_US
dc.titleStudy Of Transport Behaviour Of P-GaAs/N-GaAs EPI-Junctionsen_US
dc.typeThesisen_US
dc.degree.nameMSc Enggen_US
dc.degree.levelMastersen_US
dc.degree.disciplineFaculty of Scienceen_US


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