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    Metal-organic Vapor-Phase Epitaxy Of GaAs On Polar And Nonpolar Substrates 

    Hudait, Mantu Kumar (2012-05-01)

    Epitaxial Perovskite Superlattices For Voltage Tunable Device Applications 

    Choudhury, Palash Roy (2013-10-03)
    Perovskite based artificial superlattices has recently been extensively investigated due to the immense promise in various device applications. The major applications include non-volatile random access memories, microwave ...

    Study Of Pulsed Laser Ablated Barium Strontium Titanate Thin Flims For Dynamic Random Access Memory Applications 

    Saha, Sanjib (Indian Institute of Science, 2006-04-18)
    The present study describes the growth and characterization of pulsed laser ablated Bao.sSro.sTiOs (BST) thin films. Emphasis has been laid on the study of a plausible correlation between structure and property in order ...

    Development Of Materials For High Emission Density Electron Emitters For Microwave Tube Applications 

    Ravi, Meduri (2009-06-17)
    Microwave tubes are the choice of a wide range of high power and millimeter wave applications in radar, electronic warfare and communication systems. Advances in these devices are due to device innovation, improved modeling, ...

    Thin Films From Metalorganic Precursors : ALD Of VO2 And CVD Of (Al1-xGax)2O3 

    Dagur, Pritesh (2010-04-08)
    Thin films and coatings of oxides are used in various fields of science and technology, such as semiconductor and optoelectronic devices, gas sensors, protective and wear resistant coatings etc. Of late, there has been a ...

    Development And Synthesis Of Metalorganic Complexes Of Zr, Hf, And Cr For Application To The CVD And Sol-Gel Synthesis Of Oxide Thin Films 

    Dharmaprakash, M S (2011-07-05)

    Growth Of Epilayers Of GaAs And AlxGa1-x As By MOVPE And Their Characterization 

    Paul, Shashi (2013-09-05)

    Transport And Noise In GaAs-Based Devices 

    Choudhury, Palash Roy (2007-10-23)
    The objective of this work was to study the noise in semiconductors and relate the transport mechanisms in the devices with the noise from the devices. The main part of the work was to set up a system for the measurement ...

    Study Of Transport Behaviour Of P-GaAs/N-GaAs EPI-Junctions 

    Mahajan, Sonia (2012-04-30)

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    AuthorChoudhury, Palash Roy (2)Dagur, Pritesh (1)Dharmaprakash, M S (1)Hudait, Mantu Kumar (1)Mahajan, Sonia (1)Paul, Shashi (1)Ravi, Meduri (1)Saha, Sanjib (1)Subject
    Electronic Engineering (9)
    GaAs (4)Chemical Vapour Deposition (CVD) (2)Gallium Arsenide Semiconductors (2)MOCVD (2)Semiconductors (2)Thin Film Deposition (2)AlGaAs (1)Aluminium Gallium Oxide (1)Aluminium-Gallium Arsenide (1)... View MoreDate Issued2012 (2)2013 (2)2006 (1)2007 (1)2009 (1)2010 (1)2011 (1)Has File(s)Yes (9)

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