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    Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives 

    Chandrasekar, Hareesh (2017-10-31)
    Group III-A nitrides (GaN, AlN, InN and alloys) are materials of considerable contemporary interest and currently enable a wide variety of optoelectronic and high-power, high-frequency electronic applications. All of these ...

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    Author
    Chandrasekar, Hareesh (1)
    SubjectAlN-Si Interface (1)AlN/Si Hetero-interface (1)Aluminium Nitride (AlN) Epitaxial Layers (1)Aluminium Nitride Thin Films (1)Aluminium Nitride-Silicon Interface (1)Gallium Nitride Films (1)GaN Films (1)Group III-A Nitrides (1)High Electron Mobility Transistor (1)Materials Science (1)... View MoreDate Issued2017 (1)Has File(s)
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