This thesis aims at investigating size dependence of properties of nanostructures from the point of view of a general scaling theory that smoothly connects properties of the bulk to that of nanostructures. Two different ...

The popularity of III-nitride materials has taken up the semiconductor industry to newer applications because of their remarkable properties. In addition to having a direct and wide band gap of 3.4 eV, a very fascinating ...

Bismuth layer-structured ferroelectrics have received significant attention recently due to their fairly high TC and good fatigue endurance which make them important candidates for non-volatile ferroelectric random access ...