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A Dynamical Approach to Plastic Deformation of Nano-Scale Materials : Nano and Micro-Indentation
(2017-11-22)
Recent studies demonstrate that mechanical deformation of small volume systems can be significantly different from those of the bulk. One such interesting length scale dependent property is the increase in the yield stress ...
Tuning Electronic Properties of Low Dimensional Materials
(2017-11-22)
Discovery of grapheme has paved way for experimental realization of many physical phenomena such as massless Dirac fermions, quantum hall effect and zero-field conductivity. Search for other two dimensional (2D) materials ...
Ferroelectric Perovskite Superlattices By Pulsed Laser Ablation
(2010-03-18)
Fabrication of artificially structured superlattices, when controlled on a nanoscale level, can exhibit enhanced dielectric properties over a wide temperature range. Possible fabrication of new functional devices based on ...
Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy
(2016-04-18)
Group III-nitride semiconductors have received much research attention and witnessed a significant development due to their ample applications in solid-state lighting and high-power/high-frequency electronics. Numerous ...
Investigation of Structural and Electronic Aspects of Ultrathin Metal Nanowires
(2018-02-11)
The constant trend of device miniaturization along with ever-growing list of unusual behaviour of nanoscale materials has fuelled the recent research in fabrication and applications of ultrathin (~2 nm diameter) nanowires. ...
Semipolar And Nonpolar Group III-Nitride Heterostructures By Plasma-Assisted Molecular Beam Epitaxy
(2015-09-08)
Group III-nitride semiconductors are well suited for the fabrication of devices including visible-ultraviolet light emitting diodes, high-temperature and high-frequency devices. The wurtzite III-nitride based heterostructures ...
Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives
(2017-10-31)
Group III-A nitrides (GaN, AlN, InN and alloys) are materials of considerable contemporary interest and currently enable a wide variety of optoelectronic and high-power, high-frequency electronic applications. All of these ...
Solution-Processed Optoelectronic Devices Based on Colloidal Semiconductor Nanostructures for Photodetection
(2018-06-08)
Miniaturisation of electronic and optoelectronic devices have enabled the realization of system-on-a-chip technology in modern image sensors, where the photo sensor arrays and the corresponding signal processing circuitry ...