Browsing Materials Research Centre (MRC) by Subject "Optoelectronics devices"
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Self-powered Broadband and Ultrafast Photoresponse using InN and InGaN grown on AlN/Si (111) by Plasma-assisted Molecular Beam Epitaxy
Group III-nitride semiconductors have enabled revolution in solid-state lighting and high-power/high-frequency electronics. Now-a-days, III-nitride based photodetectors are of great importance because of their various ...