Browsing Materials Research Centre (MRC) by Subject "GaN Films"
Now showing items 1-2 of 2
-
Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives
(2017-10-31)Group III-A nitrides (GaN, AlN, InN and alloys) are materials of considerable contemporary interest and currently enable a wide variety of optoelectronic and high-power, high-frequency electronic applications. All of these ... -
Group III Nitride/p-Silicon Heterojunctions By Plasma Assisted Molecular Beam Epitaxy
(2015-07-24)The present work focuses on the growth and characterizations of GaN and InN layers and nanostructures on p-Si(100) and p-Si(111) substrates by plasma-assisted molecular beam epitaxy and the studies of GaN/p-Si and InN/p-Si ...