Browsing Materials Research Centre (MRC) by Advisor "Krupanidhi, S B"
Now showing items 1-20 of 32
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Development Of Materials For High Emission Density Electron Emitters For Microwave Tube Applications
(2009-06-17)Microwave tubes are the choice of a wide range of high power and millimeter wave applications in radar, electronic warfare and communication systems. Advances in these devices are due to device innovation, improved modeling, ... -
Earth Abundant Alternate Energy Materials for Thin Film Photovoltaics
(2018-04-06)Inexhaustible solar energy, which provides a clean, economic and green energy, seems to be an alternative solution, for current and future energy demands. Harvesting solar energy presents a challenge in using eco-friendly, ... -
Efficient Photodetectors Based on Reduced Graphene Oxide
Chapter 1: In chapter 1, we have presented a brief introduction on photodetector and its various applications. Chapter 2: Chapter 2 is the discussion about experimental methods and characterization tools. In this chapter, ... -
Electrical and Opto-Electronic Devices Based on SnSe2 Thin Films
SnSe2 is a semiconductor with unique and interesting properties such as band gap with layer thickness dependence. Theoretically, it has been predicted that the band gap can be varied between 1.2 and 2.04 eV. This range of ... -
Epitaxial Nonpolar III-Nitrides by Plasma-Assisted Molecular Beam Epitaxy
(2018-08-09)The popularity of III-nitride materials has taken up the semiconductor industry to newer applications because of their remarkable properties. In addition to having a direct and wide band gap of 3.4 eV, a very fascinating ... -
Epitaxial Perovskite Superlattices For Voltage Tunable Device Applications
(2013-10-03)Perovskite based artificial superlattices has recently been extensively investigated due to the immense promise in various device applications. The major applications include non-volatile random access memories, microwave ... -
Ferroelectric Perovskite Superlattices By Pulsed Laser Ablation
(2010-03-18)Fabrication of artificially structured superlattices, when controlled on a nanoscale level, can exhibit enhanced dielectric properties over a wide temperature range. Possible fabrication of new functional devices based on ... -
Group III Nitride/p-Silicon Heterojunctions By Plasma Assisted Molecular Beam Epitaxy
(2015-07-24)The present work focuses on the growth and characterizations of GaN and InN layers and nanostructures on p-Si(100) and p-Si(111) substrates by plasma-assisted molecular beam epitaxy and the studies of GaN/p-Si and InN/p-Si ... -
Group III-Nitride Epi And Nanostructures On Si(111) By Molecular Beam Epitaxy
(2014-11-18)The present work has been focused on the growth of Group III-nitride epitaxial layers and nanostructures on Si (111) substrates by plasma-assisted molecular beam epitaxy. Silicon is regarded as a promising substrate for ... -
Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy
(2016-04-18)Group III-nitride semiconductors have received much research attention and witnessed a significant development due to their ample applications in solid-state lighting and high-power/high-frequency electronics. Numerous ... -
III- Nitride Thin Films and Nanostructures on Si(111) by Plasma Assisted Molecular Beam Epitaxy
This thesis focuses on studying heterostructures of GaN, Silicon and AlN. GaN nanostructures are grown on bare Si (111) with and without a GaN buffer layer and GaN film was grown on an AlN layer. Apart from the material ... -
InGaN Based 2D, 1D and 0D Heterostructures on Si(111) by Plasma Assisted Molecular Beam Epitaxy
The present research work focuses on the growth and characterization of group III-Nitride (InGaN) epitaxial layers as well as nanostructures on Si(111) substrates. The growth system used in this study was a plasma-assisted ... -
Interfacing Biomolecules with Nanomaterials for Novel Applications
(2018-03-02)This thesis deals with the research work carried out for the development of novel applications by integrating biomolecules with various nanostructures. The thesis is organized as follows: Chapter 1 reviews the properties ... -
Methylammonium Lead Iodide thin lms grown by Pulsed Laser Deposition for Photodetector Applications
This thesis studies the fabrication and characterization of Methylammonium Lead Iodide perovskite thin films for photodetector applications. Unlike, any other perovskite halide material, Methylammonium Lead Iodide perovskite ... -
Multilayers And Artificial Superlattices Of Lead Magnesium Niobate-Lead Titanate Based Relaxors
(2009-03-05)The present research work mainly focuses on fabrication of compositionally modulated multilayers of (l−x) Pb(Mgi/3N2/3)O3 - x PbTiO3 (PMNPT) through multi target pulsed laser ablation technique. Heterostructures like ... -
Nonpolar III-Nitrides Optoelectronic Devices by Plasma-Assisted Molecular Beam Epitaxy
III-Nitrides are excellent semiconductors very much suitable for modern electronic and optoelectronic applications specifically in the fields of solid-state lighting, solar cells, high power/frequency electronics and ... -
Novel 1-D and 2-D Carbon Nanostructures Based Absorbers for Photothermal Applications
(2018-03-02)Solar thermal energy is emerging as an important source of renewable energy for meeting the ever-increasing energy requirements of the world. Solar selective coatings are known to enhance the efficiency of the photo thermal ... -
Properties And Applications Of Semiconductor And Layered Nanomaterials
(2014-04-07)This thesis deals with the research work carried out on the properties and applications such as GaN nanoparticles, Graphene etc. Chapter 1 of the thesis gives introduction to nanomaterials and various aspects of the ...