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    Epitaxial Nonpolar III-Nitrides by Plasma-Assisted Molecular Beam Epitaxy 

    Mukundan, Shruti (2018-08-09)
    The popularity of III-nitride materials has taken up the semiconductor industry to newer applications because of their remarkable properties. In addition to having a direct and wide band gap of 3.4 eV, a very fascinating ...

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    AuthorMukundan, Shruti (1)Subject
    GaN (1)
    III-nitride Epitaxy (1)Indium Nitride (InN) (1)InGaN (1)InGaN/GaN Heterostructures (1)m-plane Sapphire (1)m-Sapphire (1)
    Materials Science (1)
    Molecular Beam Epitaxy (1)Molecular Beam Epitaxy Plasma (1)... View MoreDate Issued
    2018 (1)
    Has File(s)
    Yes (1)

    etd@IISc is a joint service of SERC & J R D Tata Memorial (JRDTML) Library || Powered by DSpace software || DuraSpace
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