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Multifunctionalities Of Ceramics And Glass Nanocrystal Composites Of V2O5 Doped Aurivillius Family Of Ferroelectric Oxides
(2011-09-19)
In recent years bismuth-based, layer-structured perovskites such as SrBi2Nb2O9 (SBN) and SrBi2Ta2O9 (SBT) have been investigated extensively, because of their potential use in ferroelectric random access memories (FeRAMs). ...
Borate Based Glasses, Transparent Glass-Microcrystal Composites And Their Physical Properties
(2013-04-30)
Transparent glasses embedded with ferroelectric/nonlinear optic crystallites have been in increasing demand as these exhibit promising physical properties. These could be fabricated in large sizes and shapes with high ...
A Dynamical Approach to Plastic Deformation of Nano-Scale Materials : Nano and Micro-Indentation
(2017-11-22)
Recent studies demonstrate that mechanical deformation of small volume systems can be significantly different from those of the bulk. One such interesting length scale dependent property is the increase in the yield stress ...
Tuning Electronic Properties of Low Dimensional Materials
(2017-11-22)
Discovery of grapheme has paved way for experimental realization of many physical phenomena such as massless Dirac fermions, quantum hall effect and zero-field conductivity. Search for other two dimensional (2D) materials ...
Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy
(2016-04-18)
Group III-nitride semiconductors have received much research attention and witnessed a significant development due to their ample applications in solid-state lighting and high-power/high-frequency electronics. Numerous ...
Investigation of Structural and Electronic Aspects of Ultrathin Metal Nanowires
(2018-02-11)
The constant trend of device miniaturization along with ever-growing list of unusual behaviour of nanoscale materials has fuelled the recent research in fabrication and applications of ultrathin (~2 nm diameter) nanowires. ...
Semipolar And Nonpolar Group III-Nitride Heterostructures By Plasma-Assisted Molecular Beam Epitaxy
(2015-09-08)
Group III-nitride semiconductors are well suited for the fabrication of devices including visible-ultraviolet light emitting diodes, high-temperature and high-frequency devices. The wurtzite III-nitride based heterostructures ...
Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives
(2017-10-31)
Group III-A nitrides (GaN, AlN, InN and alloys) are materials of considerable contemporary interest and currently enable a wide variety of optoelectronic and high-power, high-frequency electronic applications. All of these ...