Browsing Division of Chemical Sciences by Subject "InGaN"
Now showing items 1-3 of 3
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Epitaxial Nonpolar III-Nitrides by Plasma-Assisted Molecular Beam Epitaxy
(2018-08-09)The popularity of III-nitride materials has taken up the semiconductor industry to newer applications because of their remarkable properties. In addition to having a direct and wide band gap of 3.4 eV, a very fascinating ... -
InGaN Based 2D, 1D and 0D Heterostructures on Si(111) by Plasma Assisted Molecular Beam Epitaxy
The present research work focuses on the growth and characterization of group III-Nitride (InGaN) epitaxial layers as well as nanostructures on Si(111) substrates. The growth system used in this study was a plasma-assisted ... -
Self-powered Broadband and Ultrafast Photoresponse using InN and InGaN grown on AlN/Si (111) by Plasma-assisted Molecular Beam Epitaxy
Group III-nitride semiconductors have enabled revolution in solid-state lighting and high-power/high-frequency electronics. Now-a-days, III-nitride based photodetectors are of great importance because of their various ...