Browsing by Advisor "Raghavan, Srinivasan"
Now showing items 1-20 of 24
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Anodized Zirconia Nanostructures
(2018-05-01)Electrochemical anodization is a facile technique to synthesize ordered oxide nanostructures. Though the number of materials exhibiting anodized nanostructures has increased considerably in the recent years, only nanoporous ... -
Chemical Vapour Deposition of Tungsten Disulphide Aided by Thermodynamic and Density Functional Theory Modelling
Transition metal dichalcogenides (TMDs) are versatile materials that offer a wide variety of applications in electronics, sensing, energy, etc. Tungsten disulphide (WS2) is a layered semiconductor TMD with impressive ... -
Controlling Defects in CVD Grown Graphene : Device Application Perspective
(2017-12-06)Necessity is the mother of all inventions. With Si hitting the speed bottleneck, newer materials to replace Si are being sought out. The ex-foliation based experiments on graphene by Geim and Novoselov at this point was ... -
Deeply Scaled InAlN/GaN-on-Silicon High Electron Mobility Transistors for RF Applications
Wide bandgap gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising candidates for next-generation radio frequency (RF) power amplifier applications owing to high electron saturation velocity ... -
Development and Characterization of Multi-finger GaN HEMT for Power switching applications
Power electronics is the branch that connects electricity and the world. Power devices play a significant role in reducing CO2 emissions and saving energy. As technology develops, the main focus is reducing energy consumption, ... -
Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives
(2017-10-31)Group III-A nitrides (GaN, AlN, InN and alloys) are materials of considerable contemporary interest and currently enable a wide variety of optoelectronic and high-power, high-frequency electronic applications. All of these ... -
Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD
(2017-09-20)Group III-Nitrides (GaN, InN & AlN) are considered one of the most important class of semiconducting materials after Si and GaAs. The excellent optical and electrical properties of these nitrides result in numerous ... -
Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si
(2017-11-23)Gallium Nitride (GaN) and its alloys with InN and AlN, the III-nitrides, are of interest for a variety of high power-high frequency electronics and optoelectronics applications. However, unlike Si and GaAs technology that ... -
Electro-thermal Transport through Graphene & CNT at Nano-second Time Scales and its Implications on Device Reliability
The prospects of using Graphene and MWCNT as a channel material for RF transistors and interconnects, respectively, have recently garnered much attention. E orts are being made for improvements at the material and device ... -
Engineering the Properties of Elemental 2D Materials using First-principles Calculations
(2017-12-13)Our vision is as yet unsurpassed by machines because of the sophisticated representations of objects in our brains. This representation is vastly different from a pixel-based representation used in machine storages. It is ... -
Epitaxial Integration Of Functional Oxides On Silicon (100)
Epitaxial integration of BaTiO3 (BTO) and other functional oxides with (100) Si is essential to exploit their functional capabilities using the well-established Si-CMOS technological platform. However, such oxide integration ... -
Heterogeneous Integration of Functional Oxides on Silicon
The epitaxial growth of perovskite-structure oxide thin films on silicon (Si) substrates presents an avenue for integrating diverse electronic, optoelectronic, and acoustic functionalities into the well-established, ... -
Integration of AlGaN with (111) Si Substrate by MOCVD
AlGaN is an important semiconductor material for electronic and optoelectronic applications. The change in composition of AlGaN (AlN to GaN) provides a range of bandgaps extending from 6.01 eV, far ultraviolet, to 3.4 ... -
Integration of Functional Oxide Films on Semiconducting Substrates
System-on-chip (SoC) applications have attracted the attention of the modern community due to their ability to facilitate various functionalities within a single device which can meet the requirements of day-to-day life. ... -
Investigation of Buffer Design and Carbon doping in AlGaN/GaN HEMTs for High Breakdown Voltages
III-nitride HEMTs are strong contenders for next-generation power electronic applications. The superior material and electrical properties render GaN-based transistors suitable for high-power switching. The material ... -
Investigation of Growth, Structural and Optical properties of different phases of Ga2O3
Among the semiconducting sesquioxides, Ga2O3 has attracted considerable research attention in recent years due to its excellent properties, including direct ultra wide band gap, optical transparency, high excitonic binding ... -
Large Area MoS2 : Growth and Device Characteristics
(2018-06-26)There has been growing interest in two-dimensional (2-D) crystals beyond graphene for next-generation nano-electronics. Transition metal dichalcogenides have been most widely studied, for their semiconducting characteristics ... -
Normally off AlxGa(1-x)N/GaN devices: Materials, process and device architecture innovations
AlxGa(1-x)N/GaN HEMTs find applications in power electronics systems as high-frequency power switches. The formation of a highly mobile 2 dimensional electron gas (2DEG) at a heterointerface in an otherwise insulating wide ... -
Scanning Probe microscopy of van der Waals heterostructures and non-equilibrium magnetotransport in graphene
Graphene is a two-dimensional semimetal that has linear dispersion in energy-momentum space. When graphene is subjected to a perpendicular magnetic field, the dispersion is no longer linear, resulting in discrete energy ... -
Stress and Microstructural Evolution During the Growth of Transition Metal Oxide Thin Films by PVD
(2018-05-23)System on Chip (SoC) and System in Package (SiP) are two electronic technologies that involve integrating multiple functionalities onto a single platform. When the platform is a single wafer, as in SOC, it requires the ...