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    Studies On The Electrical Properties Of Titanium Dioxide Thin Film Dielectrics For Microelectronic Applications 

    Kurakula, Sidda Reddy (2009-05-06)
    The scaling down of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional silicon dioxide layer with higher dielectric constant (K) material for gate dielectric. In order to reduce ...

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    AuthorKurakula, Sidda Reddy (1)Subject
    Dielectrics (1)
    Gate Oxide Scaling (1)Instrumentation (1)Magnetron (1)Metal-Oxide-Semiconductor Field-Effect-Transistor Scaling (1)Microelectronics (1)
    Thin Films - Deposition (1)
    TiO2 Deposition (1)Titanium Dioxide Thin Films (1)Titanium Dioxide Thin Films - Electrical Properties (1)... View MoreDate Issued2009 (1)Has File(s)Yes (1)

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