Browsing Instrumentation and Applied Physics (IAP) by Subject "HfO2 Thin Films"
Now showing items 1-2 of 2
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Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications
(2013-09-13)The scaling down of Complementary Metal Oxide Semiconductor (CMOS) transistors to sub-100nm requires replacement of conventional Silicon dioxide layer with high dielectric constant (K) material for gate dielectric. Among ... -
Optimization of HfO2 Thin Films for Gate Dielectric Applications in 2-D Layered Materials
(2018-03-02)Recently, high-κ materials have become the focus of research and been extensively utilized as the gate dielectric layer in aggressive scaled complementary metal-oxide-semiconductor (CMOS) technology. Hafnium dioxide (HfO2) ...