Browsing Instrumentation and Applied Physics (IAP) by Subject "Dielectrics"
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Optimization of HfO2 Thin Films for Gate Dielectric Applications in 2-D Layered Materials
(2018-03-02)Recently, high-κ materials have become the focus of research and been extensively utilized as the gate dielectric layer in aggressive scaled complementary metal-oxide-semiconductor (CMOS) technology. Hafnium dioxide (HfO2) ... -
Studies On The Electrical Properties Of Titanium Dioxide Thin Film Dielectrics For Microelectronic Applications
(2009-05-06)The scaling down of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional silicon dioxide layer with higher dielectric constant (K) material for gate dielectric. In order to reduce ...