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dc.contributor.advisorSambandan, Sanjiv
dc.contributor.authorDongre, Suryansh
dc.date.accessioned2020-12-18T06:06:34Z
dc.date.available2020-12-18T06:06:34Z
dc.date.submitted2018
dc.identifier.urihttps://etd.iisc.ac.in/handle/2005/4771
dc.description.abstractUV light detection has a lot of applications including secured satellite communication, solar and celestial observation and biological imaging. Wide bandgap materials are used to sense UV light. SiC is an excellent material for UV detection, having properties like high hardness, chemical inertness, thermal stability, high breakdown voltage etc. making it a very reliable and stable material for use in harsh/unknown environments. Growing SiC is a difficult task as it shows 250 different crystal structures and needs very high temperature to form crystalline film. Most of the studies use SiH4 (toxic) and other gaseous precursors for growth of SiC. We are proposing formation of crystalline SiC thin film with DC magnetron sputtering using highly pure, naturally and commercially abundant Silicon, Argon and Methane at relatively lower temperature. The technique is well known in industry and is compatible with silicon technology. SiC thin films were grown on Si Substrate. For the study of formation of crystalline films, we varied the deposition parameters. Flow rate of methane inside the chamber and DC power supplied to the target were varied to observe the change in film’s bonding, structure and crystallinity. Deposited films were characterized using FTIR, Raman, X-Ray Diffraction, Optical profilometer and UV Visible spectroscopy. Films grown were found to be polycrystalline and the study gave the clear picture to get high quality reproducible cubic SiC thin films. Optimized films were used to make a heterostructure of Al/SiC/Si/Al configuration and a planar structure of Al/SiC/Al on quartz substrate to observe the response in UV region. Study proposes that the deposited film could be used for UV detection in various applicationsen_US
dc.language.isoen_USen_US
dc.relation.ispartofseries;G29658
dc.rightsI grant Indian Institute of Science the right to archive and to make available my thesis or dissertation in whole or in part in all forms of media, now hereafter known. I retain all proprietary rights, such as patent rights. I also retain the right to use in future works (such as articles or books) all or part of this thesis or dissertationen_US
dc.subjectUV light detectionen_US
dc.subjectSiC thin filmen_US
dc.subject.classificationResearch Subject Categories::TECHNOLOGY::Engineering physicsen_US
dc.titleCrystalline Silicon Carbide Thin Films for Ultraviolet Detectionen_US
dc.typeThesisen_US
dc.degree.nameMSen_US
dc.degree.levelMastersen_US
dc.degree.grantorIndian Institute of Scienceen_US
dc.degree.disciplineFaculty of Scienceen_US


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