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Atomic-level Investigation and Proposals to Address Technological Roadblocks and Reliability Challenges in 2D Material Based Nanoelectronic Devices
The transistor scaling is witness to many extraordinary inventions during its consecutive miniaturization. The journey began from Dennard’s classical constant field scaling, crossing through the milestones like strain ...
Atom-to-circuit Modeling Strategy for 2d Transistors
Two-dimensional materials are now being considered as viable options for CMOS (complementary metal-oxide-semiconductor) technology extension due to their diverse electronic and opto-electronic properties. However, introduction ...