Browsing Electronic Systems Engineering (ESE) by Subject "Gallium Nitride"
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Developing Experimental Approaches to Gain Physical Insights into High Electric Field and Hot Electron Reliability of AlGaN/GaN HEMTs
Next-generation power conversion systems, designed to achieve environmental and economic sustainability, are required to be efficient and smaller in size. Advances in silicon-based power devices, which are the major driving ... -
Safe Operating Area Reliability of AlGaN/GaN High Electron Mobility Transistors (HEMTs)
Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) are extensively considered for power switching and RF applications by the virtue of their unique properties. However, despite of its attractive ...