Browsing Electronic Systems Engineering (ESE) by Subject "GaN HEMT"
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Physics Based Design & Development of Gallium Nitride High Electron Mobility Transistors (HEMTs) & Schottky Barrier Diodes for Power and RF Applications
Silicon-based transistors such as MOSFETs have been the preferred choice for decades now for both power as well as high-frequency device applications. The meteoric rise of Silicon was fuelled by the quest for a highly ...