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Interference Enhanced Raman Spectroscopy Of Ultra Thin Crystalline Ge & Si Films And Their Interfaces

dc.contributor.advisorMohan, S
dc.contributor.advisorSood, Ajay K
dc.contributor.authorKanakaraju, S
dc.date.accessioned2012-10-22T05:23:28Z
dc.date.accessioned2018-07-31T06:04:21Z
dc.date.available2012-10-22T05:23:28Z
dc.date.available2018-07-31T06:04:21Z
dc.date.issued2012-10-22
dc.date.submitted1997
dc.identifier.urihttps://etd.iisc.ac.in/handle/2005/1763
dc.identifier.abstracthttp://etd.iisc.ac.in/static/etd/abstracts/2289/G14904-Abs.pdfen_US
dc.language.isoen_USen_US
dc.relation.ispartofseriesG14904en_US
dc.subjectSemiconductor Filmsen_US
dc.subjectThin Films - Raman Spectroscopyen_US
dc.subjectRaman Spectroscopyen_US
dc.subjectGe Filmsen_US
dc.subjectSi Filmsen_US
dc.subject.classificationInstrumentationen_US
dc.titleInterference Enhanced Raman Spectroscopy Of Ultra Thin Crystalline Ge & Si Films And Their Interfacesen_US
dc.typeThesisen_US
dc.degree.namePhDen_US
dc.degree.levelDoctoralen_US
dc.degree.disciplineFaculty of Engineeringen_US


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