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Electrical Switching Investigations To Design Amorphous Semiconductors For Device Applications

dc.contributor.advisorAsokan, S
dc.contributor.advisorGhare, D B
dc.contributor.authorPrakash, S
dc.date.accessioned2012-05-24T10:15:28Z
dc.date.accessioned2018-07-31T06:04:17Z
dc.date.available2012-05-24T10:15:28Z
dc.date.available2018-07-31T06:04:17Z
dc.date.issued2012-05-24
dc.date.submitted1996
dc.identifier.urihttps://etd.iisc.ac.in/handle/2005/1704
dc.identifier.abstracthttp://etd.iisc.ac.in/static/etd/abstracts/2197/G14777-Abs.pdfen_US
dc.language.isoen_USen_US
dc.relation.ispartofseriesG14777en_US
dc.subjectAmorphous Semiconductors Switchingen_US
dc.subjectMelt Quenchingen_US
dc.subjectElectric Switchesen_US
dc.subjectSemiconductorsen_US
dc.subjectChalcogenides Semiconductorsen_US
dc.subjectGe-As-Te Glassesen_US
dc.subject.classificationApplied Physicsen_US
dc.titleElectrical Switching Investigations To Design Amorphous Semiconductors For Device Applicationsen_US
dc.typeThesisen_US
dc.degree.namePhDen_US
dc.degree.levelDoctoralen_US
dc.degree.disciplineFaculty of Engineeringen_US


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