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dc.contributor.advisorRao, K Narasimha
dc.contributor.authorYuvaraj, D
dc.date.accessioned2011-01-31T09:17:02Z
dc.date.accessioned2018-07-31T06:03:59Z
dc.date.available2011-01-31T09:17:02Z
dc.date.available2018-07-31T06:03:59Z
dc.date.issued2011-01-31
dc.date.submitted2009
dc.identifier.urihttps://etd.iisc.ac.in/handle/2005/1037
dc.description.abstractIn recent years, there has been growing interests on II-VI semiconductor nanostructures, which are suitable for applications in electronics and optoelectronic devices such as solar cells, UV lasers, sensors, light emitting diodes and field emission displays. II-VI semiconductor nanostructures with different morphologies such as wires, belts, rods, tubes, needles, springs, tetrapods, plates, hierarchical structures and so on, have been widely grown by vapor transport methods. However the process conditions used for the growth of nanostructures still remains incompatible for device fabrication. The realization of practical nanoscale devices using nanostructured film depends mainly on the availability of low cost and lower processing temperatures to manufacture high purity nanostructures on a variety of substrates including glass and polymer. In this thesis work, studies have been made on the growth and characterization of II-VI semiconductor nanostructures prepared at room temperature, under high vacuum, without employing catalysts or templates. (i) ZnO nanostructured films with different morphology such as flowers, needles and shrubs were deposited at room temperature on glass and polymer substrates by plasma assisted reactive process. (ii) Zn/ZnO core/shell nanowires were grown on Si substrates under optimized oxygen partial pressure. Annealing of this core shell nanowire in high vacuum resulted in the formation of ZnO nanocanals. (iii) ZnS and ZnSe nano and microstructures were grown on Si substrates under high vacuum by thermal evaporation. The morphology, structural, optical properties and composition of these nano and microstructures were investigated by XRD, SEM, TEM, Raman, PL and XPS. The growth mechanism behind the formation of the different nanostructures has been explained on the basis of vapour-solid (VS) mechanism.en_US
dc.language.isoen_USen_US
dc.relation.ispartofseriesG23508en_US
dc.subjectEvaporation Methoden_US
dc.subjectOptoelectronic Devicesen_US
dc.subjectSemiconductor Nanostructures - Growthen_US
dc.subjectZinc Oxide Nanostructuresen_US
dc.subjectZinc Sulfide Nanostructuresen_US
dc.subjectZinc Selenide Nanostructuresen_US
dc.subjectNanostructured Films - Depositionen_US
dc.subjectZinc Oxide Nanostructured Filmsen_US
dc.subjectZnO Nanostructured Filmsen_US
dc.subjectZnO Nanostructuresen_US
dc.subjectActivated Reactive Evaporationen_US
dc.subjectZnO Filmsen_US
dc.subjectZnO Nanoneedlesen_US
dc.subjectThermal Evaporationen_US
dc.subjectPolymer Substratesen_US
dc.subjectZn Microstructuresen_US
dc.subjectZnSen_US
dc.subject.classificationSemiconductors-Nanostructuresen_US
dc.titleStudies On The Growth And Characterization Of II-VI Semiconductor Nanostructures By Evaporation Methodsen_US
dc.typeThesisen_US
dc.degree.namePhDen_US
dc.degree.levelDoctoralen_US
dc.degree.disciplineFaculty of Engineeringen_US


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